@article{8674b4327a5f4297ac4fac90c09a00c2,
title = "Thermal Oxidation of Porous Silicon: Study on Reaction Kinetics",
author = "Pap, \{Andrea Edit\} and Kriszti{\'a}n Kord{\'a}s and George, \{Thomas F.\} and Seppo Lepp{\"a}vuori",
note = "Porous silicon (PS) samples obtained by dark etching of p +-type silicon wafers are oxidized in dry air, at various temperatures from 200°C up to 800°C for 1-20 h durations, to determine the kinetics of the reaction. The extent of oxidation calculated from mass gains is plotted as a function of oxidation time and temperature.",
year = "2004",
month = aug,
day = "4",
doi = "10.1021/JP049323Y",
language = "American English",
volume = "108",
journal = "Journal of Physical Chemistry B",
}