Thermal Oxidation of Porous Silicon: Study on Reaction Kinetics

Andrea Edit Pap; Krisztián Kordás; Thomas F. George; Seppo Leppävuori

doi:10.1021/JP049323Y

Thermal Oxidation of Porous Silicon: Study on Reaction Kinetics

Andrea Edit Pap
, Krisztián Kordás
, Thomas F. George
, Seppo Leppävuori

University of Missouri-St. Louis

Research output: Contribution to journal › Article › peer-review

Original language	American English
Journal	Journal of Physical Chemistry B
Volume	108
DOIs	https://doi.org/10.1021/JP049323Y
State	Published - Aug 4 2004

Disciplines

Analytical Chemistry

Access to Document

10.1021/JP049323YLicense: Unspecified

Cite this

@article{8674b4327a5f4297ac4fac90c09a00c2,

title = "Thermal Oxidation of Porous Silicon: Study on Reaction Kinetics",

author = "Pap, \{Andrea Edit\} and Kriszti{\'a}n Kord{\'a}s and George, \{Thomas F.\} and Seppo Lepp{\"a}vuori",

note = "Porous silicon (PS) samples obtained by dark etching of p +-type silicon wafers are oxidized in dry air, at various temperatures from 200°C up to 800°C for 1-20 h durations, to determine the kinetics of the reaction. The extent of oxidation calculated from mass gains is plotted as a function of oxidation time and temperature.",

year = "2004",

month = aug,

day = "4",

doi = "10.1021/JP049323Y",

language = "American English",

volume = "108",

journal = "Journal of Physical Chemistry B",

}

TY - JOUR

T1 - Thermal Oxidation of Porous Silicon: Study on Reaction Kinetics

AU - Pap, Andrea Edit

AU - Kordás, Krisztián

AU - George, Thomas F.

AU - Leppävuori, Seppo

N1 - Porous silicon (PS) samples obtained by dark etching of p +-type silicon wafers are oxidized in dry air, at various temperatures from 200°C up to 800°C for 1-20 h durations, to determine the kinetics of the reaction. The extent of oxidation calculated from mass gains is plotted as a function of oxidation time and temperature.

PY - 2004/8/4

Y1 - 2004/8/4

UR - https://hungary.pure.elsevier.com/en/publications/thermal-oxidation-of-porous-silicon-study-on-reaction-kinetics

U2 - 10.1021/JP049323Y

DO - 10.1021/JP049323Y

M3 - Article

VL - 108

JO - Journal of Physical Chemistry B

JF - Journal of Physical Chemistry B

ER -

Thermal Oxidation of Porous Silicon: Study on Reaction Kinetics

Disciplines

Access to Document

Other files and links

Cite this