The reduction of dislocations in oxygen implanted silicon‐on‐insulator layers by sequential implantation and annealing

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@article{b4cba3ffe4974a3691282cbb1bc66335,

title = "The reduction of dislocations in oxygen implanted silicon‐on‐insulator layers by sequential implantation and annealing",

author = "Dale Hill and Phil Fraundorf and Gail Fraundorf",

year = "1988",

month = may,

day = "15",

doi = "10.1063/1.340436",

language = "American English",

volume = "63",

journal = "Journal of Applied Physics",

}

TY - JOUR

T1 - The reduction of dislocations in oxygen implanted silicon‐on‐insulator layers by sequential implantation and annealing

AU - Hill, Dale

AU - Fraundorf, Phil

AU - Fraundorf, Gail

PY - 1988/5/15

Y1 - 1988/5/15

UR - http://aip.scitation.org/doi/10.1063/1.340436

U2 - 10.1063/1.340436

DO - 10.1063/1.340436

M3 - Article

VL - 63

JO - Journal of Applied Physics

JF - Journal of Applied Physics

ER -