@article{b4a46904856846a98a88f2fe71fee23e,
title = "The Effects of Thermal History during Growth on O Precipitation in Czochralski Silicon",
author = "G. Fraundorf and P. Fraundorf and Craven, \{R. A.\} and Frederick, \{R. A.\} and Moody, \{J. W.\} and Shaw, \{R. W.\}",
note = "1 Monsanto Electronic Materials Company, St. Louis, Missouri 63167 High oxygen wafers from 100 mm diam Si crystals grown by the Czochralski process, but subjected to three different thermal histories in an experimental puller, were examined by Wright etching, transmission electron microscopy, and Fourier transform infrared spectroscopy after wafer heat‐treatments at , and .",
year = "1985",
month = jan,
day = "1",
doi = "10.1149/1.2114194",
language = "American English",
volume = "132",
journal = "Journal of The Electrochemical Society",
}