Finding unstrained 10 -nm lattice defects in silicon, given 1011 per cubic centimeter

Jamie Roberts; David Osborn; P. Fraundorf

doi:10.1017/S1431927617008157

Finding unstrained 10 -nm lattice defects in silicon, given 1011 per cubic centimeter

Jamie Roberts
, David Osborn
, P. Fraundorf

University of Missouri-St. Louis

Research output: Contribution to journal › Article › peer-review

Original language	American English
Journal	Microscopy and Microanalysis
Volume	23
DOIs	https://doi.org/10.1017/S1431927617008157
State	Published - Jan 7 2017

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Other Earth Sciences
Materials Science and Engineering

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title = "Finding unstrained 10 -nm lattice defects in silicon, given 1011 per cubic centimeter",

author = "Jamie Roberts and David Osborn and P. Fraundorf",

note = "Finding unstrained 10 -nm lattice defects in silicon, given 1011 per cubic centimeter - Volume 23 Issue S1 - Jamie Roberts, David Osborn, P. Fraundorf'",

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doi = "10.1017/S1431927617008157",

language = "American English",

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AU - Roberts, Jamie

AU - Osborn, David

AU - Fraundorf, P.

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PY - 2017/1/7

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VL - 23

JO - Microscopy and Microanalysis

JF - Microscopy and Microanalysis

ER -

Finding unstrained 10 -nm lattice defects in silicon, given 1011 per cubic centimeter

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