Doping vs alloying in amorphous hydrogenated boron carbide

Brian Sylvester; Shu-Han Lin; Bernard J. Feldman

doi:10.1016/0038-1098(94)00914-7

Doping vs alloying in amorphous hydrogenated boron carbide

Brian Sylvester, Shu-Han Lin, Bernard J. Feldman

University of Missouri-St. Louis

Research output: Contribution to journal › Article › peer-review

Original language	American English
Journal	Solid State Communications
Volume	93
DOIs	https://doi.org/10.1016/0038-1098(94)00914-7
State	Published - Mar 1 1995

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Inorganic Chemistry

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title = "Doping vs alloying in amorphous hydrogenated boron carbide",

author = "Brian Sylvester and Shu-Han Lin and Feldman, {Bernard J.}",

note = "We have grown amorphous hydrogenated boron carbide thin films with boron concentrations ranging from 0 to 18 atomic percent by plasma decompostion of ...",

year = "1995",

month = mar,

day = "1",

doi = "10.1016/0038-1098(94)00914-7",

language = "American English",

volume = "93",

journal = "Solid State Communications",

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T1 - Doping vs alloying in amorphous hydrogenated boron carbide

AU - Sylvester, Brian

AU - Lin, Shu-Han

AU - Feldman, Bernard J.

N1 - We have grown amorphous hydrogenated boron carbide thin films with boron concentrations ranging from 0 to 18 atomic percent by plasma decompostion of ...

PY - 1995/3/1

Y1 - 1995/3/1

UR - https://www.sciencedirect.com/science/article/pii/0038109894009147

U2 - 10.1016/0038-1098(94)00914-7

DO - 10.1016/0038-1098(94)00914-7

M3 - Article

VL - 93

JO - Solid State Communications

JF - Solid State Communications

ER -

Doping vs alloying in amorphous hydrogenated boron carbide

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